Chanzon AO3415 SOT-23 MOS PMOS MOS P-Channel Power MOSFET Transistor, High Efficiency with Low Power Dissipation (Pack of 100pcs) - Nombre de estilo AO3415
Disponible.
Precio:
Q124.00
Elegible para
cuotas.
Ingresa el número de tu tarjeta en los detalles de pago para ver el monto total a pagar.
| Cuotas | Monto |
| 3 (Sin recargo) | Q41.33 |
| 6 (Sin recargo) | Q20.67 |
| 10 | Q13.14 |
| 12 | Q11.06 |
| 15 | Q8.89 |
| 18 | Q7.47 |
| 24 | Q5.81 |
| 36 | Q3.91 |
| 48 | Q2.96 |
| Cuotas | Monto |
| 3 (Sin recargo) | Q41.33 |
| 6 (Sin recargo) | Q20.67 |
| 10 (Sin recargo) | Q12.40 |
| 12 (Sin recargo) | Q10.33 |
| 15 | Q8.85 |
| 18 | Q7.37 |
| 24 | Q5.57 |
| 36 | Q3.83 |
| Cuotas | Monto |
| 3 | Q43.71 |
| 6 | Q22.11 |
| 10 | Q13.30 |
| 12 | Q11.16 |
| 18 | Q7.72 |
| 24 | Q5.81 |
| 36 | Q3.89 |
| Cuotas | Monto |
| 3 (Sin recargo) | Q41.33 |
| 6 (Sin recargo) | Q20.67 |
| 10 (Sin recargo) | Q12.40 |
| 12 (Sin recargo) | Q10.33 |
| 15 (Sin recargo) | Q8.27 |
| 18 (Sin recargo) | Q6.89 |
| 24 | Q5.53 |
| 36 | Q3.69 |
| 48 | Q2.76 |
| Cuotas | Monto |
| 2 (Sin recargo) | Q62.00 |
| 3 (Sin recargo) | Q41.33 |
| 6 | Q21.80 |
| 10 | Q13.14 |
| 12 | Q11.06 |
| 15 | Q8.97 |
| 18 | Q7.61 |
| Cuotas | Monto |
| 2 (Sin recargo) | Q62.00 |
| 3 (Sin recargo) | Q41.33 |
| 6 | Q21.80 |
| 10 | Q13.14 |
| 12 | Q11.06 |
| 15 | Q8.97 |
| 18 | Q7.61 |
| 24 | Q5.81 |
| 36 | Q3.89 |
| 48 | Q2.93 |
| Cuotas | Monto |
| 3 (Sin recargo) | Q41.33 |
| 6 (Sin recargo) | Q20.67 |
| 10 (Sin recargo) | Q12.40 |
| 12 (Sin recargo) | Q10.33 |
| 15 | Q8.72 |
| 18 | Q7.34 |
| 24 | Q5.63 |
| 36 | Q3.86 |
| 48 | Q2.89 |
| Cuotas | Monto |
| 3 (Sin recargo) | Q41.33 |
| 6 | Q21.80 |
| 10 | Q13.14 |
| 12 | Q11.06 |
| 15 | Q8.97 |
| 18 | Q7.61 |
- Producto - Nombre de estilo AO3415
- Transistor Type: High-Efficiency P-Channel Power MOSFET Transistor
- Transistor Polarity: PMOS Field-Effect Transistor
- Specification: Supports dissipation power (PD) up to 1.5W, Drain current (ID) up to 4A, Drain and source voltage (VDSS) up to 20V and Drain and source on-resistance (RDS(on)) of 0.041 Ω at ambient temperature (Ta) of 25℃.
- Application: Ideal for power switching, amplification, and power management applications, especially in scenarios demanding high efficiency and low power dissipation.
- Package: Securely packed in anti-static bags providing electrostatic protection, ensuring ESD safety and long shelf life.
Información del producto
| PID | Mzc4YjA4ZD |
| Número de modelo | B08LVL1KBP |
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